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| Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.90.1 1.05 2.50.1 (1.45) 0.05 0.8 q q q 0.45-0.05 +0.1 (Ta=25C) 1 2 3 0.45-0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.50.5 2.50.5 +0.1 Ratings 55 55 7 200 100 400 150 -55 ~ +150 Unit V V V mA mA mW C C 1.20.1 0.65 max. 0.45+0.1 - 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 2.50.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT NV * Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT min typ max 100 1 14.50.5 0.85 Low noise voltage NV. High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.65 max. 1.0 3.50.1 0.8 s Features 0.15 0.7 4.0 Unit nA A V V V 55 55 7 210 650 1.0 200 150 VCE(sat) V MHz mV *h FE Rank classification R 210 ~ 340 S 290 ~ 460 T 360 ~ 650 hFE Rank 1 Transistor PC -- Ta 500 120 Ta=25C 100 IB=400A 350A Ta=25C 300A 250A 80 200A 60 150A 100 2SD1993 IC -- VCE 120 25C VCE=5V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 400 Ta=75C 80 -25C 300 60 200 40 100A 40 100 20 50A 20 0 0 40 80 120 160 200 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 Ta=75C 25C -25C IC/IB=10 1000 hFE -- IC 400 VCE=5V fT -- I E VCB=5V Ta=25C Forward current transfer ratio hFE 800 Transition frequency fT (MHz) 10 30 100 350 300 250 200 150 100 50 600 Ta=75C 400 25C -25C 200 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 10 8 IE=0 f=1MHz Ta=25C 8 7 NF -- IE 120 VCE=5V Rg=1k Ta=25C NV -- IC VCE=10V GV=80dB Function=FLAT Collector output capacitance Cob (pF) 100 Noise figure NF (dB) 6 5 4 3 2 1 f=100Hz Noise voltage NV (mV) 80 Rg=100k 60 22k 40 5k 20 6 4 2 1kHz 10kHz -30 -100 -300 -1000 0 1 3 10 30 100 0 -10 0 0.01 0.03 0.1 0.3 1 Collector to base voltage VCB (V) Emitter current IE (A) Collector current IC (A) 2 |
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